| PART |
Description |
Maker |
| IXFH50N30Q3 IXFT50N30Q3 |
HiperFETTM Power MOSFETs Q3-Class
|
IXYS Corporation
|
| IXFT10N100Q |
HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
| IXFR120N20 |
HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
| IXFB82N60Q3 |
HiperFETTM Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFB62N80Q3 |
HiperFETTM Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFE50N50 |
(IXFE50N50 / IXFE55N50) HiPerFETTM Power MOSFET
|
IXYS Corporation
|
| IXFR21N100Q |
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| FMM75-01F |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
